BDP952...BDP956
PNP Silicon AF Power Transistors
For AF driver and output stages High current gain Low collector-e...
BDP952...BDP956
PNP Silicon AF Power
Transistors
For AF driver and output stages High current gain Low collector-emitter saturation voltage Complementary types: BDP951...BDP955 (
NPN)
4
3 2 1
VPS05163
Type BDP952 BDP954 BDP956
Maximum Ratings Parameter
Marking BDP 952 BDP 954 BDP 956 1=B 1=B 1=B
Pin Configuration 2=C 2=C 2=C 3=E 3=E 3=E 4=C 4=C 4=C
Package SOT223 SOT223 SOT223
Symbol VCEO VCBO VEBO
BDP952 80 100 5
BDP954 100 120 5
BDP956 Unit 120 140 5 V
Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99 °C Junction temperature Storage temperature
Thermal Resistance
IC ICM IB IBM Ptot Tj Tstg
RthJS
3 5 200 500 3 150 -65 ... 150
A mA W °C
Junction - soldering point1)
17
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Jul-06-2001
BDP952...BDP956
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BDP952 BDP954 BDP956 Collector-base breakdown voltage IC = 100 µA, IB = 0 BDP952 BDP954 BDP956 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 100 V, IE = 0 Collector cutoff current VCB = 100 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 10 mA, VCE = 5 V IC = 500 mA, VCE = 1 V IC = 2 A, VCE = 2 V Colle...
