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BDP952 Dataheets PDF



Part Number BDP952
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
Datasheet BDP952 DatasheetBDP952 Datasheet (PDF)

BDP 952 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP951...BDP955 (NPN) Type BDP 952 BDP 954 BDP 956 Marking Ordering Code BDP 952 Q62702-D1340 BDP 954 Q62702-D1342 BDP 956 Q62702-D1344 Pin Configuration 1=B 1=B 1=B 2=C 2=C 2=C 3=E 3=E 3=E 4=C 4=C 4=C Package SOT-223 SOT-223 SOT-223 Maximum Ratings Parameter Collector-emitter voltage BDP 952 BDP 954 BDP 956 .

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BDP 952 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP951...BDP955 (NPN) Type BDP 952 BDP 954 BDP 956 Marking Ordering Code BDP 952 Q62702-D1340 BDP 954 Q62702-D1342 BDP 956 Q62702-D1344 Pin Configuration 1=B 1=B 1=B 2=C 2=C 2=C 3=E 3=E 3=E 4=C 4=C 4=C Package SOT-223 SOT-223 SOT-223 Maximum Ratings Parameter Collector-emitter voltage BDP 952 BDP 954 BDP 956 Collector-base voltage BDP 952 BDP 954 BDP 956 Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99°C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Symbol Values 80 100 120 Unit V VCEO VCBO 100 120 140 VEBO IC ICM IB IBM Ptot Tj Tstg RthJA RthJS 1 5 3 5 200 500 W 150 - 65 ... + 150 ≤ 42 ≤ 17 °C mA A K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group Nov-28-1996 BDP 952 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO V 80 100 120 100 20 100 25 40 15 475 V 0.8 1.5 nA µA nA - IC = 10 mA, IB = 0 mA, BDP 952 IC = 10 mA, IB = 0 mA, BDP 954 IC = 10 mA, IB = 0 mA, BDP 956 Collector-base breakdown voltage V(BR)CBO IC = 100 µA, IB = 0 , BDP 952 IC = 100 µA, IB = 0 , BDP 954 IC = 100 µA, IB = 0 , BDP 956 Base-emitter breakdown voltage 100 120 140 V(BR)EBO 5 IE = 10 µA, IC = 0 Collector cutoff current ICBO - VCB = 100 V, IE = 0 , TA = 25 °C VCB = 100 V, IE = 0 , TA = 150 °C Emitter cutoff current IEBO hFE VEB = 4 V, IC = 0 DC current gain IC = 10 mA, VCE = 5 V IC = 500 mA, VCE = 1 V IC = 2 A, VCE = 2 V Collector-emitter saturation voltage 1) VCEsat VBEsat - IC = 2 A, IB = 0.2 A Base-emitter saturation voltage 1) IC = 2 A, IB = 0.2 A AC Characteristics Transition frequency fT 100 40 - MHz pF - IC = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance Ccb VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2% Semiconductor Group 2 Nov-28-1996 BDP 952 Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy Permissible Pulse Load RthJS = f(tp) 3.2 10 3 K/W W TS TA RthJS 10 2 Ptot 2.4 2.0 10 1 1.6 10 0 1.2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 0.8 10 -1 0.4 0.0 0 20 40 60 80 100 120 °C 150 TA ,TS 10 -2 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Permissible Pulse Load Ptotmax / PtotDC = f(tp) DC current gain hFE = f (IC) VCE = 2V 10 3 10 3 - Ptotmax/P totDC 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 hFE 100°C 25°C 10 2 -50°C 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 1 0 10 10 1 10 2 10 3 mA IC Semiconductor Group 3 Nov-28-1996 BDP 952 Collector cutoff current ICBO = f (TA) VCB = 45V Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 10 5 nA .


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