NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain)
BDP 951
NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain...
BDP 951
NPN Silicon AF Power
Transistors For AF drivers and output stages High collector current High current gain Low collector-emitter saturation voltage Complementary type: BDP952...BDP956 (
PNP)
Type BDP 951 BDP 953 BDP 955
Marking Ordering Code BDP 951 Q62702-D1339 BDP 953 Q62702-D1341 PDP 955 Q62702-D1343
Pin Configuration 1=B 1=B 1=B 2=C 2=C 2=C 3=E 3=E 3=E 4=C 4=C 4=C
Package SOT-223 SOT-223 SOT-223
Maximum Ratings Parameter Collector-emitter voltage BDP 951 BDP 953 BDP 955 Collector-base voltage BDP 951 BDP 953 BDP 955 Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99°C Junction temperature Storage temperature Thermal Resistance Junction ambient
1)
Symbol
Values 80 100 120
Unit V
VCEO
VCBO
100 120 140
VEBO IC ICM IB IBM Ptot Tj Tstg RthJA RthJS
1
5 3 5 200 500 3 150 - 65 ... + 150 ≤ 42 ≤ 17 W °C mA A
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group
Nov-28-1996
BDP 951
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics
Collector-emitter breakdown voltage
Values typ. max.
Unit
V(BR)CEO
V 80 100 120 100 20 100 25 40 15 475 V 0.8 1.5 nA µA nA -
IC = 10 mA, IB = 0 mA, BDP 951 IC = 10 mA, IB = 0 mA, BDP 953 IC = 10 mA, IB = 0 mA, BDP 955
Collector-base breakdown voltage
V(BR)CBO
IC 100 µA, IB = 0 , BDP 951 IC = 100 µA, IB = 0 , BDP 953 IC = 100 µA, I...
