BDP950

BDP 948 PNP Silicon AF Power Transistor For AF drivers and output stages High collector current High current gain Low collector-emitter saturation voltage Complementary type: BDP947, BDP949 (NPN) Type BDP 948 BDP 950 Marking Ordering Code BDP 948 Q62702-D1336 BDP 950 Q62702-D1338 Pin Configuration 1=B 1=B 2=C 2=C 3=E 3=E 4=C 4=C Package SOT-223 SOT-223 Maximum Ratings Parameter Collector-emitter voltage BDP 948 BDP 950 Collector-base voltage BDP 948 BDP 950 Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99°C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Symbol Values 45 60 Unit V VCEO VCBO 45 60 VEBO IC ICM IB IBM Ptot Tj Tstg RthJA RthJS 5 3 5 200 500 3 150 - 65 ... + 150 ≤ 42 ≤ 17 W °C mA A K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group 1 Nov-28-1996 BDP 948 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO V 45 60 100 20 100 25 85 50 475 V 0.5 1.3 nA µA nA - IC = 10 mA, IB = 0 mA, BDP 948 IC = 10 mA, IB = 0 mA, BDP 950 Collector-base breakdown voltage V(BR)CBO IC = 100 µA, IB = 0 , BDP 948 IC = 100 µA, IB = 0 , BDP 950 Base-emitter breakdown voltage 45 60 V(BR)EBO 5 IE = 10 µA, IC = 0 Collector cutoff current ICBO - VCB = 45 V, IE = 0 , TA =...