BDL32

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D087 BDL32 PNP BISS-transistor Product specification Supersedes data of 1998 Aug 03 1999 Apr 29 Philips Semiconductors Product specification PNP BISS-transistor BDL32 FEATURES High current (max. 5 A) Low voltage (max. 10 V) Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS Battery powered units where high current and low power consumption are important. DESCRIPTION PNP BISS (Breakthrough In Small Signal) transistor in a SOT223 plastic package. NPN complement: BDL31. PINNING PIN 1 2 3 4 base not connected emitter collector DESCRIPTION handbook, halfpage 4 4 1 3 1 Top view 2 3 MAM373 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −15 −10 −5 −5 −10 −1 1.35 +150 150 +150 V V V A ...