DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D087
BDL32 PNP BISS-transistor
Product specification Supersedes dat...
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D087
BDL32
PNP BISS-
transistor
Product specification Supersedes data of 1998 Aug 03 1999 Apr 29
Philips Semiconductors
Product specification
PNP BISS-
transistor
BDL32
FEATURES High current (max. 5 A) Low voltage (max. 10 V) Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS Battery powered units where high current and low power consumption are important. DESCRIPTION
PNP BISS (Breakthrough In Small Signal)
transistor in a SOT223 plastic package.
NPN complement: BDL31.
PINNING PIN 1 2 3 4 base not connected emitter collector DESCRIPTION
handbook, halfpage
4
4 1 3
1 Top view 2 3
MAM373
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −15 −10 −5 −5 −10 −1 1.35 +150 150 +150 V V V A ...