BD712

® BD707/709/711 BD708/712 COMPLEMENTARY SILICON POWER TRANSISTORS s COMPLEMENTARY PNP - NPN DEVICES APPLICATION s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The BD707 and BD711 complementary PNP types are BD708 and BD712 respectively. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO VCER V CEO VEBO IC ICM IB P tot Ts tg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tc ≤ 25 o C Storage Temperature Max. Operating Junction Temperature BD707 BD708 60 60 60 Value BD709 80 80 80 5 12 18 5 75 -65 to 150 150 Un it BD711 BD712 100 100 100 V V V V A A A W o C o C For PNP types voltage and current values are negative September 1999 1/6 BD707/708/709/711/712 THERMAL DATA R thj -case R thj -case Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.67 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BD707/708 for BD709 for BD711/712 T case = 150 oC for BD707/708 for BD709 for BD711/712 for BD707/708 for BD709 for BD711/712 V EB = 5 V I C...