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BD680A Dataheets PDF



Part Number BD680A
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description PNP Silicon Transistor
Datasheet BD680A DatasheetBD680A Datasheet (PDF)

BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG Plastic Medium-Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 • BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 •.

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BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG Plastic Medium-Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 • BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, BD682TG VCEO Vdc 45 60 80 100 Collector-Base Voltage BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, BD682TG VCB Vdc 45 60 80 100 Emitter-Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VEB 5.0 Vdc IC 4.0 Adc IB 0.1 Adc PD 40 W 0.32 W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction−to−Case RqJC 3.13 Unit °C/W http://onsemi.com 4.0 AMP DARLINGTON POWER TRANSISTORS PNP SILICON 45, 60, 80, 100 VOLT, 40 WATT COLLECTOR 2, 4 BASE 3 EMITTER 1 123 TO−225 CASE 77−09 STYLE 1 MARKING DIAGRAMS YWW BD6xxG YWW BD6xxAG Y = Year WW = Work Week BD6xx = Device Code xx = 76, 78, 80, 82, or 82T G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 14 Publication Order Number: BD676/D BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = 50 mAdc, IB = 0) BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, BD682TG BVCEO Vdc 45 − 60 − 80 − 100 − Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0) Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) (VCB = Rated BVCEO. IE = 0, TC = 100°C) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ICEO mAdc − 500 ICBO − − mAdc 0.2 2.0 IEBO − mAdc 2.0 ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 1.5 Adc, VCE = 3.0 Vdc) BD676G, BD678G, BD680G, BD682G (IC = 2.0 Adc, VCE = 3.0 Vdc) BD676AG, BD678AG, BD680AG hFE − 750 − 750 − Collector−Emitter Saturation Voltage (Note 1) (IC = 1.5 Adc, IB = 30 mAdc) BD678G, BD680G, BD682G (IC = 2.0 Adc, IB = 40 mAdc) BD676AG, BD678AG, BD680AG VCE(sat) − − Vdc 2.5 2.8 Base−Emitter On Voltage (Note 1) (IC = 1.5 Adc, VCE = 3.0 Vdc) BD678G, BD680G, BD682G (IC = 2.0 Adc, VCE = 3.0 Vdc) BD676AG, BD678AG, BD680AG VBE(on) − − Vdc 2.5 2.5 DYNAMIC CHARACTERISTICS Small−Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) hfe − 1.0 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. PD, POWER DISSIPATION (WATTS) IC, COLLECTOR CURRENT (AMP) 50 5.0 45 40 2.0 35 1.0 30 BONDING WIRE LIMIT 25 0.5 THERMAL LIMIT at TC = 25°C 20 SECONDARY BREAKDOWN LIMIT 15 10 5.0 0 15 30 45 60 75 90 105 120 135 150 165 0.2 BD676, 676A 0.1 TC = 25°C BD678, 678A BD680, 680A 0.05 1.0 2.0 BD682 5.0 10 20 50 100 TC, CASE TEMPERATURE (°C) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Power Temperature Derating Figure 2. DC Safe Operating Area http://onsemi.com 2 BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. PNP BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, BD682TG BASE COLLECTOR [ 8.0 k [ 120 EMITTER Figure 3. Darlington Circuit Sch.


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