Document
BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG
Plastic Medium-Power Silicon PNP Darlingtons
This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications.
Features
• High DC Current Gain • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary
with BD675, 675A, 677, 677A, 679, 679A, 681
• BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 • These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, BD682TG
VCEO
Vdc
45
60
80
100
Collector-Base Voltage BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, BD682TG
VCB
Vdc
45
60
80
100
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TC = 25°C Derate above 25°C
VEB
5.0
Vdc
IC
4.0
Adc
IB
0.1
Adc
PD
40
W
0.32
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction−to−Case
RqJC
3.13
Unit °C/W
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4.0 AMP DARLINGTON POWER TRANSISTORS
PNP SILICON 45, 60, 80, 100 VOLT, 40 WATT
COLLECTOR 2, 4
BASE 3
EMITTER 1
123
TO−225 CASE 77−09
STYLE 1
MARKING DIAGRAMS
YWW BD6xxG
YWW BD6xxAG
Y
= Year
WW = Work Week
BD6xx = Device Code
xx = 76, 78, 80, 82, or 82T
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 14
Publication Order Number: BD676/D
BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1) (IC = 50 mAdc, IB = 0) BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, BD682TG
BVCEO
Vdc
45
−
60
−
80
−
100
−
Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)
Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) (VCB = Rated BVCEO. IE = 0, TC = 100°C)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ICEO
mAdc
−
500
ICBO −
−
mAdc 0.2 2.0
IEBO −
mAdc 2.0
ON CHARACTERISTICS
DC Current Gain (Note 1) (IC = 1.5 Adc, VCE = 3.0 Vdc) BD676G, BD678G, BD680G, BD682G (IC = 2.0 Adc, VCE = 3.0 Vdc) BD676AG, BD678AG, BD680AG
hFE
−
750
−
750
−
Collector−Emitter Saturation Voltage (Note 1)
(IC = 1.5 Adc, IB = 30 mAdc) BD678G, BD680G, BD682G
(IC = 2.0 Adc, IB = 40 mAdc) BD676AG, BD678AG, BD680AG
VCE(sat) − −
Vdc 2.5 2.8
Base−Emitter On Voltage (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc) BD678G, BD680G, BD682G
(IC = 2.0 Adc, VCE = 3.0 Vdc) BD676AG, BD678AG, BD680AG
VBE(on) − −
Vdc 2.5 2.5
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
hfe
−
1.0
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
PD, POWER DISSIPATION (WATTS) IC, COLLECTOR CURRENT (AMP)
50
5.0
45
40
2.0
35
1.0
30
BONDING WIRE LIMIT
25
0.5
THERMAL LIMIT at TC = 25°C
20
SECONDARY BREAKDOWN LIMIT
15 10 5.0 0
15 30 45 60 75 90 105 120 135 150 165
0.2 BD676, 676A
0.1
TC = 25°C
BD678, 678A BD680, 680A
0.05
1.0
2.0
BD682
5.0
10
20
50
100
TC, CASE TEMPERATURE (°C)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Power Temperature Derating
Figure 2. DC Safe Operating Area
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BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG
There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.
PNP BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, BD682TG
BASE
COLLECTOR [ 8.0 k [ 120
EMITTER Figure 3. Darlington Circuit Sch.