Document
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1142
DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min)
APPLICATIONS ·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0) Gate-Source Voltage
800 ±20
V V
Drain Current-continuous@ TC=25℃ 2 A
Total Dissipation@TC=25℃
35 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient
0.83 35
℃/W ℃/W
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1142
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDI.