Document
CAS300M12BM2
1.2kV, 4.2 mΩ All-Silicon Carbide
Half-Bridge Module
C2M MOSFET and Z-RecTM Diode
VDS 1.2 kV
Esw, Total @ 300A
12 mJ
RDS(on)
4.2 mΩ
Features • Ultra Low Loss • High-Frequency Operation • Zero Reverse Recovery Current from Diode • Zero Turn-off Tail Current from MOSFET • Normally-off, Fail-safe Device Operation • Ease of Paralleling • Copper Baseplate and Aluminum Nitride Insulator
System Benefits • Enables Compact and Lightweight Systems • High Efficiency Operation • Mitigates Over-voltage Protection • Reduced Thermal Requirements • Reduced System Cost
Applications • Induction Heating • Motor Drives • Solar and Wind Inverters • UPS and SMPS • Traction
Package 62mm x 106mm x 30mm
Part Number
Package
Marking
CAS300M12BM2 Half-Bridge Module CAS300M12BM2
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
VDSmax VGSmax VGSo.