CAS120M12BM2

VDS CAS120M12BM2 IDS 1200 V, 120 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module 1200 V 120 A Technical Features Industry Standard 62mm Footprint Ultra-Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum Nitride Insulator Package 61.4 mm X 106.4 mm X 30 mm Applications Railway & Traction Solar & Renewable Energy EV Charging Industrial Automation & Testing System Benefits Fast Time-to-Market with Minimal Development Required for Transition from 62mm IGBT Packages Increased System Efficiency, due to Low Switching & Conduction Losses of SiC Maximum Parameters (Verified by Design) Symbol Parameter Min. VDS max Drain-Source Voltage VGS max Gate-Source Voltage, Maximum Value -10 VGS op Gate-Source Voltage, Recommended Op. Value -5 IDS DC Continuous Drain-Source Current ISD DC Continuous Source-Drain Current IF Schottky Diode DC Forward Current IDS (pulsed) Maximum Pulsed Drain-Source Current IF (pulsed) Maximum Pulsed Diode Current Maximum Virtual Junction TVJ op Temperature under Switching -40 Conditions Typ. Max. Unit Test Conditions 1200 +25 V Transient, <100 ns +20 Static Note Fig. 33 200 144 460 312 480 480 VGS = 20 V, TC = 25 ˚C, TVJ ≤ 150 ˚C Fig. 21 VGS = 20 V, TC = 90 ˚C, TVJ ≤ 150 ˚C VGS = 20 V, TC = 25 ˚C, TVJ ≤ 150 ˚C A VGS = -5 V, TC = 25 ˚C, TVJ ≤ 150 ˚C...