C3M0120100J

VDS 1000 V C3M0120100J ID @ 25˚C 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode Features Package C3MTM SiC MOSFET technology Low parasitic inductance with separate driver source pin 7mm of creepage distance between drain and source High blocking voltage with low On...