C3M0030090K

VDS 900 V C3M0030090K ID @ 25˚C 73 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 30 mΩ N-Channel Enhancement Mode Features Package C3MTM SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Solar inverters EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Part Number C3M0030090K Drain (Pin 1, TAB) Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) Package TO 247-4 Marking C3M0030090K Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value VDSmax VGSmax VGSop Drain - Source Voltage Gate - Source Voltage (dynamic) Gate - Source Voltage (static) ID Continuous Drain Current 900 -8/+19 -4/+15 73 48 ID(pulse) Pulsed Drain Current 200 PD Power Dissipation TJ , Tstg Operating Junction and Storage Temperature TL Solder Temperature Md Mounting Torque, (M3 or 6-32 screw) Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V 240 -40 to +150 260 1 8.8 Unit Test C...