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BD544B Dataheets PDF



Part Number BD544B
Manufacturers Power Innovations Limited
Logo Power Innovations Limited
Description PNP SILICON POWER TRANSISTORS
Datasheet BD544B DatasheetBD544B Datasheet (PDF)

BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD543 Series 70 W at 25°C Case Temperature 8 A Continuous Collector Current 10 A Peak Collector Current Customer-Specified Selections Available B C E q q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless o.

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BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD543 Series 70 W at 25°C Case Temperature 8 A Continuous Collector Current 10 A Peak Collector Current Customer-Specified Selections Available B C E q q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD544 Collector-base voltage (IE = 0) BD544A BD544B BD544C BD544 Collector-emitter voltage (IB = 0) BD544A BD544B BD544C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC ICM Ptot Ptot TA Tj Tstg TL VCEO VCBO SYMBOL VALUE -40 -60 -80 -100 -40 -60 -80 -100 -5 -8 -10 70 2 -65 to +150 -65 to +150 -65 to +150 260 V A A W W °C °C °C °C V V UNIT PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD544 V (BR)CEO IC = -30 mA (see Note 4) VCE = -40 V ICES Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio V CE = -60 V V CE = -80 V V CE = -100 V ICEO IEBO VCE = -30 V V CE = -60 V VEB = VCE = V CE = V CE = IB = IB = IB = VCE = -5 V -4 V -4 V -4 V -0.3 A -1 A -1.6 A -4 V VBE = 0 V BE = 0 V BE = 0 V BE = 0 IB = 0 IB = 0 IC = 0 IC = IC = IC = IC = IC = IC = IC = -1 A -3 A -5 A -3 A -5 A -8 A -5 A (see Notes 4 and 5) f = 1 kHz f = 1 MHz 20 3 (see Notes 4 and 5) (see Notes 4 and 5) 60 40 15 -0.5 -0.5 -1 -1.4 V V IB = 0 BD544A BD544B BD544C BD544 BD544A BD544B BD544C BD544/544A BD544B/544C MIN -40 -60 -80 -100 -0.4 -0.4 -0.4 -0.4 -0.7 -0.7 -1 mA mA mA V TYP MAX UNIT hFE VCE(sat) VBE hfe VCE = -10 V VCE = -10 V IC = -0.5 A IC = -0.5 A |hfe| NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using vo.


BD544B BD544B BD544C


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