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P-Channel Enhancement Mosfet
GENERAL DESCRIPTION
The ME7423 P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
ME7423/ME7423-G
FEATURES
● RDS(ON) ≦13mΩ@VGS=-10V ● RDS(ON) ≦17mΩ@ VGS=-4.5V
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC
PIN CONFIGURATION
(DFN 3.3x3.3) Top View
e Ordering Information: ME7423 (Pb-free)
ME7423-G (Green product-Halogen free)
Absolute Maximum Ratings (Tj=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage
Gate-Source Voltage
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