ME7812S-G

ME7812S-G N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode GENERAL DESCRIPTION The ME7812S N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON) ≦8.5mΩ@VGS=10V ● RDS(ON) ≦17.5mΩ@VGS=4.5V APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC PIN CONFIGURATION (DFN 3.3x3.3) Top View e Ordering Information: ME7812S-G (Green product-Halogen free) Absolute Maximum Ratings (Tj=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Cont...