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ME7114-G Dataheets PDF



Part Number ME7114-G
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME7114-G DatasheetME7114-G Datasheet (PDF)

N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7114-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power l.

  ME7114-G   ME7114-G



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N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7114-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (DFN 3.3x3.3) Top View ME7114-G FEATURES ● RDS(ON)≦7mΩ@VGS=10V ● RDS(ON)≦10.5mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch Bottom View e Ordering Information: ME7114-G (Green product-Halogen free) Absolute Maximum R.


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