ME6970

Dual N-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION The ME6970 Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TSSOP-8) Top View ME6970/ME6970-G FEATURES ● RDS(ON)≦21mΩ@VGS=10V ● RDS(ON)≦24mΩ@ VGS=4.5V ● RDS(ON)≦32mΩ@ VGS=2.5V ● RDS(ON)≦50mΩ@ VGS=1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC e Ordering Infor...