Dual N-Channel 20-V (D-S) MOSFET
ME6970D/ME6970D-G
GENERAL DESCRIPTION
The ME6970D Dual N-Channel logic enhancement mo...
Dual N-Channel 20-V (D-S) MOSFET
ME6970D/ME6970D-G
GENERAL DESCRIPTION
The ME6970D Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(TSSOP-8) Top View
FEATURES
● RDS(ON)≦22mΩ@VGS=4.5V
● RDS(ON)≦23mΩ@VGS=4.0V
● RDS(ON)≦26mΩ@VGS=3.0V
● RDS(ON)≦29mΩ@VGS=2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC
e Ordering In...