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ME80N08AF-G Dataheets PDF



Part Number ME80N08AF-G
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME80N08AF-G DatasheetME80N08AF-G Datasheet (PDF)

N-Channel 80V (D-S) MOSFET ME80N08AF/ME80N08AF-G GENERAL DESCRIPTION The ME80N08AF is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦5mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● .

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N-Channel 80V (D-S) MOSFET ME80N08AF/ME80N08AF-G GENERAL DESCRIPTION The ME80N08AF is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦5mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CONFIGURATION (TO-220F) Top View * The Ordering Information: ME80N08A F(Pb-free) ME80N08AF-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Ratings Unit Drain-Source Voltage VDS 80 V Gate-Source Voltage Continuous Drain Current* Pulsed Drain Currenta Power Dissipation Tc=25℃ TC=70℃ TC=25℃ TC=70℃ VGS ID IDM PD ±20 81 68 326 66 46 V A A W.


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