ME80N75AF / ME80N75AF-G
N- Channel 75-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME80N75AF is the N-Channel logic enhanceme...
ME80N75AF / ME80N75AF-G
N- Channel 75-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME80N75AF is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
● RDS(ON)≦10mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management ● DC/DC Converter ● Load Switch
PIN CONFIGURATION
(TO-220F) Top View
* The Ordering Information: ME80N75AF (Pb-free) ME80N75AF-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-So...
