GT40WR21

Discrete IGBTs Silicon N-Channel IGBT GT40WR21 GT40WR21 1. Applications (Note) Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.15 µs (typ.) (IC = 40 A) FWD : trr = 1.0 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 2.9 V (typ.) (IC = 40 A) (6) High junction temperature : Tj = 175 (max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter ©2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2011-05 2018-04-23 Rev.3.0 GT40WR21 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (1 ms) Diode forward current (DC) Diode forward current (100 µs) Collector power dissipation Junction temperature Storage temperature Mounting torque (Tc = 25) (Note 1) VCES VGES IC ICP IF IFP PC Tj Tstg TOR 1800 ±25 40 80 20 80 375 175 -55 to 175 0.8 V A W  Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the ...