ME7686-G

N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7686-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION PowerDFN 5x6 Top View ME7686/ME7686-G FEATURES ● RDS(ON)≦10.5mΩ@VGS=10V ● RDS(ON)≦18mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● NB/MB High side switching ● Battery Powered System ● DC/DC Converter ● Load Switch * The Ordering Information: ME7686/ME7686-G (Green product-Halo...