Document
ME7688/ME7688-G
N-Channel 30V(D-S) Enhancement MOSFET
GENERAL DESCRIPTION
The ME7688 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
PowerDFN 5x6
FEATURES
● RDS(ON)≦11mΩ@VGS=10V
● RDS(ON)≦19.5mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● NB/MB Vcore Low side switching ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch
e Ordering Information: ME7688 (Pb-free)
ME768.