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SSM3J353F

Toshiba Semiconductor

Silicon P-Channel MOSFET

Description
MOSFETs Silicon P-Channel MOS (U-MOS) SSM3J353F 1. Applications Power Management Switches 2. Features (1) 4.0 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 274 mΩ (max) (@VGS = -4.0 V, ID = -0.5 A) RDS(ON) = 232 mΩ (max) (@VGS = -4.5 V, ID = -0.5 A) RDS(ON) = 150 mΩ (max) (@VGS = -10 V, ID = -2.0 A) 3. Packaging and Pin Assignment S...


Toshiba Semiconductor

SSM3J353F

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