30V N-Channel Enhancement Mode
ME45N03T/ME45N03T-G
GENERAL DESCRIPTION
The ME45N03T is the N-Channel logic enhancement...
30V N-Channel Enhancement Mode
ME45N03T/ME45N03T-G
GENERAL DESCRIPTION
The ME45N03T is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
FEATURES
● RDS(ON)≦14mΩ@VGS=10V ● RDS(ON)≦21mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
PIN CONFIGURATION
(TO-220) Top View
eOrdering Information: ME45N03T (Pb-free)
ME45N03T-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Continuous Drain Current(Tj=150℃)
TC=25℃ TC=70℃
ID
Pulsed Drain Current
IDM
Maximum Power Dissipation
TC=25℃ TC=70℃
PD
Opera...
