N-Channel 150-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME100N15T-G is the N-Channel logic enhancement mode power field eff...
N-Channel 150-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME100N15T-G is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(TO-220) Top View
ME100N15T-G
FEATURES
● RDS(ON)≦13.6mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
* The Ordering Information: ME100N15T-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise N...