N- Channel 250V (D-S) MOSFET
ME07N25/ME07N25-G
GENERAL DESCRIPTION
The ME07N25 is the N-Channel logic enhancement mode...
N- Channel 250V (D-S) MOSFET
ME07N25/ME07N25-G
GENERAL DESCRIPTION
The ME07N25 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
FEATURES
● RDS(ON)≦590mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
APPLICATIONS
● Power Management ● DC/DC Converter ● LCD TV & Monitor Display inverter ● CCFL inverter ● Secondary Synchronous Rectification
PIN CONFIGURATION
(TO-252-3L) Top View
* The Ordering Information: ME07N25 (Pb-free) ME07N25-G (Green product-Halogen free)
Absolute Maximu(GmreRenaptriondgucst) (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current
TC=25℃ TC=70℃
Pulsed Drain Current Maximum Power Dissipation
TC=25℃ TC=70℃
Operating Junction Temperature
Thermal Resistance-Junction to Case*
Symbol
VDS VGS
ID
ID...
