ME3205T

N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION The ME3205T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. ME3205T/ME3205T-G FEATURES ● RDS(ON)≦6.5mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter PIN CONFIGURATION (TO-220) Top View * TheOrdering Information: ME3205T (Pb-free) ME4 ME3205T-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Maximum ...