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ME3205F Dataheets PDF



Part Number ME3205F
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME3205F DatasheetME3205F Datasheet (PDF)

N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION The ME3205F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outlin.

  ME3205F   ME3205F


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N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION The ME3205F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. PIN CONFIGURATION (TO-220F) Top View ME3205F/ME3205F-G FEATURES ● RDS(ON)≦6mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter * TheOrdering Information: ME3205F (Pb-free) ME4 ME3205F-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Ratings Drain-Source Vol.


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