ME50N10F-G

N-Channel 100-V (D-S) MOSFET ME50N10F/ME50N10F-G GENERAL DESCRIPTION The ME50N10F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦30mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CONFIGURATION (TO-220F) Top View * The Ordering Information: ME50N10F (Pb-free) ME50N10F-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Tc=25℃ TC=70℃ Power Dissipation TC=25℃ TC=70℃ Operating Junction and Storage Temperature Range Thermal Resistance-Junction to Cas...