ME2514

N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME2514 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. ME2514/ME2514-G FEATURES ● RDS(ON)≦166mΩ@VGS=10V ● RDS(ON)≦213mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● DC/DC Converter ● Load Switch PIN CONFIGURATION (SOT-89) Top View * The Ordering Information: ME2514 (Pb-free) ME2514-G (Green product-Halogen free ) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Paramet...