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ME2N7002DKW-G Dataheets PDF



Part Number ME2N7002DKW-G
Manufacturers Matsuki
Logo Matsuki
Description Dual N-Channel MOSFET
Datasheet ME2N7002DKW-G DatasheetME2N7002DKW-G Datasheet (PDF)

kw ME2N7002DKW-G Dual N - Channel 60V (D-S) MOSFET, ESD Protection Protected GENERAL DESCRIPTION The ME2N7002DKW-G is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits .

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kw ME2N7002DKW-G Dual N - Channel 60V (D-S) MOSFET, ESD Protection Protected GENERAL DESCRIPTION The ME2N7002DKW-G is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-363) FEATURES ● RDS(ON)≦3Ω@VGS=10V ● RDS(ON)≦4Ω@VGS=4.5V ● RDS(ON)≦4.5Ω@VGS=3V ● ESD Protection HBM >2KV ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter Top View  Th Ordering Informa.


ME2N7002D1KW-G ME2N7002DKW-G AN5722


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