Document
kw ME2N7002DKW-G
Dual N - Channel 60V (D-S) MOSFET, ESD Protection Protected
GENERAL DESCRIPTION
The ME2N7002DKW-G is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOT-363)
FEATURES
● RDS(ON)≦3Ω@VGS=10V ● RDS(ON)≦4Ω@VGS=4.5V ● RDS(ON)≦4.5Ω@VGS=3V ● ESD Protection HBM >2KV
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
Top View
Th Ordering Informa.