MEBSS138D

MEBSS138D/MEBSS138D-G N-Channel 50V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The MEBSS138D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION FEATURES ● RDS(ON)≦3.5Ω@VGS=10V ● RDS(ON)≦4Ω@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (SOT-23) Top View Ordering Information:MEBSS138D (Pb-free) MEBSS138D-G (Green product-Halogen free) Absolute Maximum...