ME16P10/ME16P10-G
P- Channel 100-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME16P10 is the P-Channel logic enhancement mode...
ME16P10/ME16P10-G
P- Channel 100-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME16P10 is the P-Channel logic enhancement mode power field
effect
transistors are produced using high cell density, DMOS trench
FEATURES
● RDS(ON)≦195mΩ@VGS=-10V ● RDS(ON)≦210mΩ@VGS=-4.5V
technology. This high density process is especially tailored to
● Super high density cell design for extremely low RDS(ON)
minimize on-state resistance. These devices are particularly suited
● Exceptional on-resistance and maximum DC current
for low voltage application such as cellular phone and notebook
capability
computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
(TO-252-3L) Top View
* The Ordering Information: ME16P10 (Pb-free) ME16P10-G (Green product-Halogen free )
Absolute Max...