ME1303AT3

P-Channel Enhancement MOSFET ME1303AT3/ME1303AT3-G GENERAL DESCRIPTION The ME1303AT3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-323) Top View FEATURES ● -20V/-3.4A,RDS(ON)=95mΩ@VGS=-4.5V ● -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V ● -20V/-1.7A,RDS(ON)=180mΩ@VGS=-1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Swi...