N-Channel 20-V (D-S) MOSFET
ME1304AT3/ME1304AT3-G
GENERAL DESCRIPTION
The ME1304AT3 is the N-Channel logic enhancement...
N-Channel 20-V (D-S) MOSFET
ME1304AT3/ME1304AT3-G
GENERAL DESCRIPTION
The ME1304AT3 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SC70-3L) Top View
FEATURES
● RDS(ON) ≦ 65 mΩ @VGS=4.5V
● RDS(ON) ≦ 80 mΩ @VGS=2.5V
● RDS(ON) ≦ 95 mΩ @VGS=1.8V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Load Switch ● DSC
Ordering Information: ME1304AT3 (Pb-free)
ME1304AT3-G...
