ME13N10A

ME13N10A/ME13N10A-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME13N10A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON) ≦145mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● DC/DC Converter ● Load Switch ● LCD/ LED Display inverter PIN CONFIGURATION (TO-252-3L) Top View * The Ordering Information: ME13N10A (Pb-free) ME13N10A-G (Green product-Halogen free ) Absolute Maximum Ratings (Tc=25℃ Unless Otherwis...