ME2322

N-Channel 55-V (D-S) MOSFET GENERAL DESCRIPTION The ME2322 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION ME2322/ME2322-G FEATURES ● RDS(ON)≦80mΩ@VGS=10V ● RDS(ON)≦90mΩ@VGS=4.5V ● RDS(ON)≦120mΩ@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Load Switch ● DSC (SOT-23) Top View e Ordering Information: ME2322 (Pb-free) ME2322-G (Green product-Halogen free) ...