ME2318S

N-Channel 40V (D-S) MOSFET ME2318S /ME2318S-G GENERAL DESCRIPTION The ME2318S-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View FEATURES ● RDS(ON) ≦40mΩ@VGS=10V ● RDS(ON) ≦65mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● DC/DC Converter ● Load Switch ● LCD Display inverter * The Ordering Information: ME2318S / ME2318S-G (Green product-Ha...