ME2307

P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME2307 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View ME2307/ME2307-G FEATURES ● RDS(ON) ≦70mΩ@VGS=-10V ● RDS(ON) ≦95mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC Ordering Information:ME2307 (Pb-free) ME2307-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage...