ME2306S

N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION The ME2306S is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. ME2306S/ME2306S-G FEATURES FEATURES ● RDS(ON)≦37mΩ@ VGS =10V ● RDS(ON)≦49mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CONFIGURATION (SOT-23) Top View * The Ordering Information: ME2306S (Pb-free) ME2306S-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ ...