ME2306

N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME2306 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. ME2306/ME2306-G FEATURES ● RDS(ON)≦37mΩ@VGS=10V ● RDS(ON)≦49mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability PIN CONFIGURATION (SOT-23) Top View PIN DESCRIPTION Pin Symbol 1G 2S 3D Description Gate Source Drain e Ordering Information: ME2306 (Pb-free) ME2306-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Vo...