ME2301GC

P-Channel 20V (D-S) MOSFET ME2301GC/ ME2301GC-G GENERAL DESCRIPTION The ME2301GC is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View FEATURES ● RDS(ON) ≦75mΩ@VGS=-4.5V ● RDS(ON) ≦95mΩ@VGS=-2.5V ● RDS(ON) ≦130mΩ@VGS=-1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC e Ordering Information: ME2301GC (Pb-f...