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K6T1008C2C Dataheets PDF



Part Number K6T1008C2C
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description CMOS SRAM
Datasheet K6T1008C2C DatasheetK6T1008C2C Datasheet (PDF)

K6T1008C2C Family Document Title 128K x8 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 History Initial draft 0.1 First revision - Seperate read and write at ICC, ICC1 ICC = ICC1 → Read : 15mA, Write : 35mA 1.0 Finalized - Add 70ns speed bin for commercial product and 85ns speed bin for industrial. 2.0 Revised - Improved operating current Add typical value. ICC Read : 15mA → 10mA(Remove write current) ICC2 : 90mA → 60mA - Speed bin change Remove 45ns from commercial part .

  K6T1008C2C   K6T1008C2C


Document
K6T1008C2C Family Document Title 128K x8 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 History Initial draft 0.1 First revision - Seperate read and write at ICC, ICC1 ICC = ICC1 → Read : 15mA, Write : 35mA 1.0 Finalized - Add 70ns speed bin for commercial product and 85ns speed bin for industrial. 2.0 Revised - Improved operating current Add typical value. ICC Read : 15mA → 10mA(Remove write current) ICC2 : 90mA → 60mA - Speed bin change Remove 45ns from commercial part Remove 55ns and 100ns from industrial part. PRELIMINARY CMOS SRAM Draft Date November 22, 1995 April 15, 1996 Remark Design target Preliminary September 5, 1996 Final November 5, 1997 Final The attached data sheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revisio.


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