100V N-ch Power MOSFET
General Features
Proprietary New Trench Technology RDS(ON),typ.=5.3mΩ@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode
MXP1007AT
BVDSS 100V
RDS(ON),max. 7.0mΩ
ID[2] 143
Applications
High efficiency DC/DC Converters Synchronous Rectification
UPS Inverter
Ordering Information
Part Number Packa...
