N-Channel Enhancement Mode MOSFET
MSM30N03G
Chip Integration Technology Corporation N-Channel ENHANCEMENT MODE POWER MOSFET
Features:
□ Low On-Resistance...
Description
MSM30N03G
Chip Integration Technology Corporation N-Channel ENHANCEMENT MODE POWER MOSFET
Features:
□ Low On-Resistance □ Low Input Capacitance □ Green Device Available 「 Low Miller Charge 「 100% EAS and 100% Rg Guaranteed
Package Dimensions Package Dimensions
Description:
The MSM30N03G uses advanced Trench technology and designs to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. The MSM30N03G meet the RoHS and Green Product requirement, 100% EAS and 100% Rg guaranteed with full function reliability approved.
BVDSS RDS(ON) ID
30V 6mΩ 40A3
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Continuous Drain Current3
Total Power Dissipation
VDS VGS ID @TA=25℃ ID @TA=70℃
IDM ID @TC=25℃ ID @TC=70℃ PD @TC=25℃ PD @TA=25℃
Single Pulse Avalanche Energy, L=0.1mH Single Pulse Avalanche Current, L=...
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