MSL049P03G

MSL049P03G P-Channel Enhancement Mode MOSFET ■ Features -30V/-23.8A RDS(ON) = 4.9mΩ (max.) @ VGS= -10V RDS(ON) = 8.2mΩ (max.) @ VGS= -4.5V Super high dense cell design Reliable and Rugged. Lead free and green device available (RoHS compliant). HBM ESD protection level pass 8KV. Note: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ■ Application Power management in notebook computer portable equipment and battery powered system. ■ Pin Description DDDD Top View of SOP-8 ( 5,6,7,8 ) D D DD SSSG (4) G SSS (1, 2, 3) P- Channel MOSFET ■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Pulsed Drain Current(Note:1) Gate-Source Voltage VGS =-10V Diode Continuous Forward Current(Note:1) Avalanche Current, single pulse (Note:2) L=0.5mH L=1mH Avalanche Energy, single pulse (Note:2) L=0.5mH L=1mH Thermal Resistance...