MSG061P03G
P-Channel Enhancement Mode MOSFET
■ Features
-30V/-40A RDS(ON) = 6.1mΩ (max.) @ VGS= -10V RDS(ON) = 11mΩ (max.) @ VGS= -4.5V
HBM ESD protection level pass 8KV. 100% UIS+Rg tested. Reliable and Rugged. Lead free and green device available
(RoHS compliant).
Note: The diode connected between the gate and source serves only as protection ag...
