MHU04N60

Chip Integration Technology Corporation MHU04N60 Silicon N-Channel Power MOSFET Main Product Characteristics ID VDSS PD(TC=25oC) RDS(ON)Typ 4A 600V 75W 2.0Ω ■ Features Fast switching. ESD improved capability. Low gate charge. (Typical Data:13nC) Low reverse transfer capacitances.(Typical:2.2pF) 100% single pulse avalanche energy test. ■ Application Power switch circuit of adaptor and charger. ■ Outline TO-251 12 3 1.Gate 2.Drain 3.Source Drain ■ Mechanical data Epoxy:UL94-V0 rated flame retardant Case : JEDEC TO-251 molded plastic body over passivated chip Lead : Axial leads, solderable per MIL-STD-202, Method 208 guranteed. Gate Source Inner Equivalent principium Chart ■ Absolute(TC = 25OC unless otherwise specified) PARAMETER Drain to Source Voltage CONDITIONS Continuous Drain Current Continuous Drain Current Pulsed Drain Current(Note:1) Gate to Source Voltage Single Pulse Avalanche Energy(Note:2) Avalanche Current(Note:1) Ava...