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BPW46L Dataheets PDF



Part Number BPW46L
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Silicon PIN Photodiode
Datasheet BPW46L DatasheetBPW46L Datasheet (PDF)

Silicon PIN Photodiode BPW46L Vishay Semiconductors Description BPW46L is a high speed and high sensitive PIN photodiode in a flat side view plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. The large active area combined with a flat case gives a high sensitivity at a wide viewing angle. Features 14439 • Long lead package (33.2 mm) • Large radiant sensitive area (A = 7.5 mm2) • Wide angle of half sensitivity ϕ = ± 65 ° • High photo sens.

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Silicon PIN Photodiode BPW46L Vishay Semiconductors Description BPW46L is a high speed and high sensitive PIN photodiode in a flat side view plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. The large active area combined with a flat case gives a high sensitivity at a wide viewing angle. Features 14439 • Long lead package (33.2 mm) • Large radiant sensitive area (A = 7.5 mm2) • Wide angle of half sensitivity ϕ = ± 65 ° • High photo sensitivity • Fast response times • Small junction capacitance • Clear plastic case • Suitable for visible and near infrared radiation • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications High speed photo detector Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse Voltage Power Dissipation Junction Temperature Tamb ≤ 25 °C Storage Temperature Range Soldering Temperature t≤5s Thermal Resistance Junction/ Ambient Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Breakdown Voltage IR = 100 µA, E = 0 Reverse Dark Current VR = 10 V, E = 0 Diode capacitance VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 Symbol Value Unit VR 60 V PV 215 mW Tj 100 °C Tstg - 55 to + 100 °C Tsd 260 °C RthJA 350 K/W Symbol Min Typ. Max Unit V(BR) 60 V Iro 2 30 nA CD 70 pF CD 25 40 pF Document Number 81525 Rev. 1.3, 08-Mar-05 www.vishay.com 1 BPW46L Vishay Semiconductors Optical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Open Circuit Voltage Temp. Coefficient of Vo Short Circuit Current Temp. Coefficient of Ik Reverse Light Current Angle of Half Sensitivity Wavelength of Peak Sensitivity Ee = 1 mW/cm2, λ = 950 nm Ee = 1 mW/cm2, λ = 950 nm EA = 1 klx Ee = 1 mW/cm2, λ = 950 nm Ee = 1 mW/cm2, λ = 950 nm EA = 1 klx, VR = 5 V Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Range of Spectral Bandwidth Noise Equivalent Power Rise Time Fall Time VR = 10 V, λ = 950 nm VR = 10 V, RL = 1 kΩ, λ = 820 nm VR = 10 V, RL = 1 kΩ, λ = 820 nm Symbol Vo TKVo Ik Ik TKIk Ira Ira ϕ λp λ0.5 NEP tr tf Min Typ. Max 350 - 2.6 70 47 0.1 75 40 50 ± 65 900 600 to 1050 4 x 10-14 100 100 Typical Characteristics (Tamb = 25 °C unless otherwise specified) 8 1.4 6 E=0 f = 1 MHz 4 1.2 VR = 5 V λ = 950 nm 1.0 Unit mV mV/K µA µA %/K µA µA deg nm nm W/√ Hz ns ns CD - Diode Capacitance ( pF ) Ira rel - Relative Reverse Light Current 2 0.8 0 0.1 1 10 100 94 8430 VR - Reverse Voltage ( V ) Figure 1. Reverse Dark Current vs. Ambient Temperature 0.6 0 94 8416 20 40 60 80 100 Tamb - Ambient Temperature ( °C ) Figure 2. Relative Reverse Light Current vs. Ambient Temperature www.vishay.com 2 Document Number 81525 Rev. 1.3, 08-Mar-05 1000 Ira – Reverse Light Current (µA) 100 10 1 VR = 5 V λ= 950 nm 0.1 0.01 94 8417 0.1 1 10 Ee – Irradiance ( mW/cm2 ) Figure 3. Reverse Light Current vs. Irradiance 1000 Ira – Reverse Light Current (µA) 100 10 VR = 5 V 1 0.1 101 94 8418 102 103 104 EA – Illuminance ( lx ) Figure 4. Diode Capacitance vs. Reverse Voltage Ira – Reverse Light Current (µA) 100 1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 10 0.1 mW/cm2 0.05 mW/cm2 λ = 950 nm 1 0.1 1 10 100 94 8419 VR – Reverse Voltage ( V ) Figure 5. Reverse Light Current vs. Reverse Voltage BPW46L Vishay Semiconductors CD - Diode Capacitance ( pF ) 80 E=0 f = 1 MHz 60 40 20 0 0.1 94 8407 1 10 100 VR - Reverse V oltage ( V ) Figure 6. Diode Capacitance vs. Reverse Voltage S ( λ )rel – Relative Spectral Sensitivity 1.0 0.8 0.6 0.4 0.2 0 350 94 8420 550 750 950 λ – Wavelength ( nm ) 1150 Figure 7. Relative Spectral Sensitivity vs. Wavelength 0° 10 20 ° ° 30° Srel – Relative Sensitivity 40° 1.0 0.9 50° 0.8 60° 0.7 70° 80° 94 8406 0.6 0.4 0.2 0 0.2 0.4 0.6 Figure 8. Relative Radiant Sensitivity vs. Angular Displacement Document Number 81525 Rev. 1.3, 08-Mar-05 www.vishay.com 3 BPW46L Vishay Semiconductors Package Dimensions in mm 14437 www.vishay.com 4 Document Number 81525 Rev. 1.3, 08-Mar-05 BPW46L Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of OD.


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