Document
Silicon PIN Photodiode
BPW46L
Vishay Semiconductors
Description
BPW46L is a high speed and high sensitive PIN photodiode in a flat side view plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation.
The large active area combined with a flat case gives a high sensitivity at a wide viewing angle.
Features
14439
• Long lead package (33.2 mm) • Large radiant sensitive area (A = 7.5 mm2)
• Wide angle of half sensitivity ϕ = ± 65 ° • High photo sensitivity • Fast response times • Small junction capacitance • Clear plastic case • Suitable for visible and near infrared radiation • Lead-free component • Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
High speed photo detector
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse Voltage
Power Dissipation Junction Temperature
Tamb ≤ 25 °C
Storage Temperature Range
Soldering Temperature
t≤5s
Thermal Resistance Junction/ Ambient
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Breakdown Voltage
IR = 100 µA, E = 0
Reverse Dark Current
VR = 10 V, E = 0
Diode capacitance
VR = 0 V, f = 1 MHz, E = 0
VR = 3 V, f = 1 MHz, E = 0
Symbol
Value
Unit
VR
60
V
PV
215
mW
Tj
100
°C
Tstg
- 55 to + 100
°C
Tsd
260
°C
RthJA
350
K/W
Symbol
Min
Typ.
Max
Unit
V(BR)
60
V
Iro
2
30
nA
CD
70
pF
CD
25
40
pF
Document Number 81525 Rev. 1.3, 08-Mar-05
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BPW46L
Vishay Semiconductors
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Open Circuit Voltage Temp. Coefficient of Vo Short Circuit Current
Temp. Coefficient of Ik Reverse Light Current
Angle of Half Sensitivity Wavelength of Peak Sensitivity
Ee = 1 mW/cm2, λ = 950 nm Ee = 1 mW/cm2, λ = 950 nm EA = 1 klx Ee = 1 mW/cm2, λ = 950 nm Ee = 1 mW/cm2, λ = 950 nm EA = 1 klx, VR = 5 V Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V
Range of Spectral Bandwidth
Noise Equivalent Power Rise Time Fall Time
VR = 10 V, λ = 950 nm VR = 10 V, RL = 1 kΩ, λ = 820 nm VR = 10 V, RL = 1 kΩ, λ = 820 nm
Symbol Vo
TKVo Ik Ik
TKIk Ira Ira
ϕ λp λ0.5 NEP tr tf
Min
Typ.
Max
350
- 2.6
70 47
0.1
75
40
50
± 65 900 600 to 1050 4 x 10-14 100 100
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
8
1.4
6
E=0 f = 1 MHz 4
1.2
VR = 5 V
λ = 950 nm
1.0
Unit mV mV/K µA µA %/K µA µA
deg nm nm W/√ Hz ns ns
CD - Diode Capacitance ( pF ) Ira rel - Relative Reverse Light Current
2
0.8
0
0.1
1
10
100
94 8430
VR - Reverse Voltage ( V )
Figure 1. Reverse Dark Current vs. Ambient Temperature
0.6 0
94 8416
20
40 60
80 100
Tamb - Ambient Temperature ( °C )
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
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Document Number 81525 Rev. 1.3, 08-Mar-05
1000
Ira – Reverse Light Current (µA)
100
10
1
VR = 5 V λ= 950 nm
0.1 0.01
94 8417
0.1
1
10
Ee – Irradiance ( mW/cm2 )
Figure 3. Reverse Light Current vs. Irradiance
1000
Ira – Reverse Light Current (µA)
100
10
VR = 5 V 1
0.1 101
94 8418
102
103
104
EA – Illuminance ( lx )
Figure 4. Diode Capacitance vs. Reverse Voltage
Ira – Reverse Light Current (µA)
100 1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2 10
0.1 mW/cm2
0.05 mW/cm2
λ = 950 nm 1
0.1
1
10
100
94 8419
VR – Reverse Voltage ( V )
Figure 5. Reverse Light Current vs. Reverse Voltage
BPW46L
Vishay Semiconductors
CD - Diode Capacitance ( pF )
80 E=0
f = 1 MHz
60
40
20
0 0.1
94 8407
1
10
100
VR - Reverse V oltage ( V )
Figure 6. Diode Capacitance vs. Reverse Voltage
S ( λ )rel – Relative Spectral Sensitivity
1.0
0.8
0.6
0.4
0.2
0 350
94 8420
550
750
950
λ – Wavelength ( nm )
1150
Figure 7. Relative Spectral Sensitivity vs. Wavelength
0° 10 20
°
°
30°
Srel – Relative Sensitivity
40° 1.0
0.9
50°
0.8
60°
0.7
70°
80°
94 8406
0.6 0.4 0.2
0 0.2
0.4 0.6
Figure 8. Relative Radiant Sensitivity vs. Angular Displacement
Document Number 81525 Rev. 1.3, 08-Mar-05
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BPW46L
Vishay Semiconductors
Package Dimensions in mm
14437
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Document Number 81525 Rev. 1.3, 08-Mar-05
BPW46L
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of OD.